Magnetoresistive Random-Access Memory (MRAM) is a type of Non-Volatile Memory where data is stored as a magnetic field. It offers the speed of SRAM, a density similar to DRAM, the non-volatility of Flash Memory and unlimited read/write cycles, and low power consumption.

MRAM is a super-memory that is increasingly used as a replacement for both volatile, and non-volatile storage on spacecraft.

The most common implementation uses a magnetic tunnel junction, where the resistance of the cell is a function of the direction of a magnetic field. This state is stable in time, even at high temperatures. Furthermore, unlike Flash Memory, write erase operations do not damage the cell, soi the lifetime of the cell is not bounded by use.

Radiation Resistance

Similar to FRAME, since the data is not stored as an electrical potential, MRAM memory is immune to radiation.